Vacuum sealing using atomic layer deposition of Al2O3 at 250 C

نویسندگان

  • Seungdo An
  • Naveen K. Gupta
  • Yogesh B. Gianchandani
چکیده

This paper describes the use of low-temperature atomic layer deposition (ALD) of Al2O3, for vacuum seals in wafer-level vacuum packaging and other applications. The conformal coverage provided by ALD Al2O3 is shown to seal circular micromachined cavities. The cavities are 0.8 lm in height, 400 lm in diameter, and are capped by porous plasma-enhanced chemical vapor deposited dielectrics that form a membrane. The ALD Al2O3 film, of thickness 0.2 lm, is deposited at a temperature of 250 C on this membrane. The retention of vacuum is indicated by the deflection of the membrane. Lifetime tests extending out to 19 months are reported. VC 2014 American Vacuum Society. [http://dx.doi.org/10.1116/1.4820240]

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

منابع مشابه

Enhanced Corrosion Resistance of PVD-CrN Coatings by ALD Sealing Layers

Multilayered hard coatings with a CrN matrix and an Al2O3, TiO2, or nanolaminate-Al2O3/TiO2 sealing layer were designed by a hybrid deposition process combined with physical vapor deposition (PVD) and atomic layer deposition (ALD). The strategy was to utilize ALD thin films as pinhole-free barriers to seal the intrinsic defects to protect the CrN matrix. The influences of the different sealing ...

متن کامل

Solution based prompt inorganic condensation and atomic layer deposition of Al2O3 films: A side-by-side comparison

A comparison was made of Al2O3 films deposited on Si via prompt inorganic condensation (PIC) and atomic layer deposition (ALD). Current–voltage measurements as a function of annealing temperature indicate that the solution-processed PIC films, annealed at 500 C, exhibit lower leakage and roughly equivalent breakdown strength in comparison to ALD films. PIC films are less dense than as-deposited...

متن کامل

Surface passivation of c-Si by atmospheric pressure chemical vapor deposition of Al2O3

Related Articles Influence of annealing and Al2O3 properties on the hydrogen-induced passivation of the Si/SiO2 interface J. Appl. Phys. 111, 093713 (2012) Magnetic properties of ZnO nanoclusters J. Appl. Phys. 111, 084321 (2012) Self-passivation of transparent single-walled carbon nanotube films on plastic substrates by microwave-induced rapid nanowelding Appl. Phys. Lett. 100, 163120 (2012) N...

متن کامل

Improved oxidation resistance of organic/inorganic composite atomic layer deposition coated cellulose nanocrystal aerogels

Cellulose nanocrystal (CNC) aerogels are coated with thin conformal layers of Al2O3 using atomic layer deposition to form hybrid organic/inorganic nanocomposites. Electron probe microanalysis and scanning electron microscopy analysis indicated the Al2O3 penetrated more than 1500 lm into the aerogel for extended precursor pulse and exposure/purge times. The measured profile of coated fiber radiu...

متن کامل

Atomic layer deposition of Al2O3 on GaSb using in situ hydrogen plasma exposure

In this report, we study the effectiveness of hydrogen plasma surface treatments for improving the electrical properties of GaSb/Al2O3 interfaces. Prior to atomic layer deposition of an Al2O3 dielectric, p-GaSb surfaces were exposed to hydrogen plasmas in situ, with varying plasma powers, exposure times, and substrate temperatures. Good electrical interfaces, as indicated by capacitance-voltage...

متن کامل

ذخیره در منابع من


  با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید

برای دانلود متن کامل این مقاله و بیش از 32 میلیون مقاله دیگر ابتدا ثبت نام کنید

ثبت نام

اگر عضو سایت هستید لطفا وارد حساب کاربری خود شوید

عنوان ژورنال:

دوره   شماره 

صفحات  -

تاریخ انتشار 2013